Theoretical Study of Grain Boundaries in Compound Semiconductors. Analysis of Coincidence Tilt Boundaries in SiC.
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چکیده
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1994
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.15.116